0439987 - FZÚ 2015 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Dubecký, F. - Zat'ko, B. - Vanko, G. - Hubík, Pavel - Oswald, Jiří - Kindl, Dobroslav - Gombia, E. - Kováč, J. - Šagátová, A. - Nečas, V.
M/SI-GaAs/M diode: Role of the metal contact in electrical transport, α-particle and photon detection.
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. Bratislava: Slovak University of Technology, 2014 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 49-52. ISBN 978-1-4799-5474-2.
[International Conference on Advanced Semiconductor Devices and Microsystems /10./. Smolenice (SK), 20.10.2014-22.10.2014]
Institucionální podpora: RVO:68378271
Klíčová slova: current-voltage measurements * GaAs * radiation detectors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
DOI: https://doi.org/10.1109/ASDAM.2014.6998643

Current-voltage measurements as well as α-particle and photon detection were utilized to an investigation of a novel low work function Mg-metallization in semi-insulating (SI) GaAs. An anomalous decrease of the reverse current has been observed with such contact in comparison with the high work function, Pt Schottky barrier. Possible explanation relates likely to the creation of quasi-degenerate region, containing accumulated electrons, at the Mg/SI-GaAs interface.
Trvalý link: http://hdl.handle.net/11104/0243147