0439340 - FZÚ 2015 RIV NL eng C - Konferenční příspěvek (zahraniční konf.)
Holovský, Jakub - Remeš, Zdeněk - De Wolf, S. - Ballif, C.
Surface and ultrathin-layer absorptance spectroscopy for solar cells.
Energy Procedia. Vol. 60. Amsterdam: Elsevier Ltd, 2014 - (Gordon, I.; Valenta, J.; Turan, R.; Atwater, H.; Mirabella, S.), s. 57-62. ISSN 1876-6102.
[E-MRS Spring Meeting 2014. Lille (FR), 26.05.2014-30.05.2014]
Grant CEP: GA MŠMT 7E12029; GA ČR(CZ) GA14-05053S
GRANT EU: European Commission(XE) 283501 - Fast Track
Institucionální podpora: RVO:68378271
Klíčová slova: surface states * thin-film limit * ATR-FTIR * photothermal deflection spectrscopy * photocurrent spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
DOI: https://doi.org/10.1016/j.egypro.2014.12.342

The methods Photothermal Deflection Spectroscopy and Fourier Transform Photocurrent Spectroscopy were modified to measure defect absorptance at the semiconductor surfaces and in ultra-thin layers. We present a method allowing us to routinely probe the hydrogen content and microstructure of ultrathin layers on top of crystalline wafer. We study the effects of sample storage, annealing and light soaking on defect density and the hydrogen content. Surface-defect layers, present on 350 nm thick hydrogenated amorphous silicon, were studied and correlated to behavior of only 10 nm thick films of the same material. Interestingly, these distinct structures all exhibited similar behavior: loss of hydrogen due to <200°C annealing, practically no increase of defect density by light soaking, reduction of defect density just by storage in air. The observed behavior of the ultrathin layers is diametrically different from the usual behavior of bulk hydrogenated amorphous silicon.
Trvalý link: http://hdl.handle.net/11104/0242654