0435179 - ÚFP 2015 RIV GB eng J - Článek v odborném periodiku
Giuffrida, L. - Torrisi, L. - Gammino, S. - Wolowski, J. - Ullschmied, Jiří
Surface ion implantation induced by laser-generated plasmas.
Radiation Effects and Defects in Solids. Roč. 165, 6-10 (2010), s. 534-542. ISSN 1042-0150. E-ISSN 1029-4953.
[International Workshop on Pulsed Plasma Laser Ablation (PPLA)/4./. Monte Pieta, Messina, 18.06.2009-20.06.2009]
Institucionální podpora: RVO:61389021
Klíčová slova: laser ablation * laser plasma * ion implantation * RBS analysis
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech
Impakt faktor: 0.660, rok: 2010 ; AIS: 0.168, rok: 2010
DOI: https://doi.org/10.1080/10420151003722560

Surface ion implantation induced by laser-generated plasmas was investigated using the PALS Prague laser facilities. Cu, Ge, Ag and Ta ions were obtained through the ablation of solid targets in vacuum by means of 1015W/cm2 laser pulses. Energetic ions ( 0.1-1MeV) were implanted on different substrate surfaces (Si, C, Al, Ti and polyethylene) placed at different distances from the target and angles from the normal to the target surface. In order to increase the ion dose, implantation was performed by using more laser shots in the same experimental conditions. An ion energy analyzer was employed for online measurements of the ion energies and charge states produced by the laser plasma. Off-line Rutherford backscattering spectroscopy (RBS) of alpha particles allowed us to determine the ion depth profiles, the ion energies and the ion amount implanted on the substrate surfaces. RBS spectra have shown typical implanted deep profiles only for substrates placed along the normal to the
Trvalý link: http://hdl.handle.net/11104/0239100