Počet záznamů: 1  

Growth rate enhancement and morphology engineering of diamond films by adding CO.sub.2./sub. or N.sub.2./sub. in hydrogen rich gas chemistry

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    0432636 - FZÚ 2015 RIV US eng J - Článek v odborném periodiku
    Ižák, Tibor - Davydova, Marina - Varga, Marián - Potocký, Štěpán - Kromka, Alexander
    Growth rate enhancement and morphology engineering of diamond films by adding CO2 or N2 in hydrogen rich gas chemistry.
    Advanced Science, Engineering and Medicine. Roč. 6, č. 7 (2014), s. 749-755. ISSN 2164-6627
    Grant CEP: GA MPO FR-TI2/736; GA ČR GAP205/12/0908; GA ČR(CZ) GP14-16549P
    Institucionální podpora: RVO:68378271
    Klíčová slova: microwave plasma CVD * diamond growth * nitrogen * carbon dioxide * growth rate * SEM
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

    Diamond films and structures were grown by MWCVD. We show that increasing of CH4 concentration in the gas mixture up to 8% results almost in a linear increasing of growth rate (up to 900 nm/h). Unfortunately, diamond film quality decreases due to the dominance of sp2 carbon phases, as confirmed by Raman measurements. Furthermore, increasing of CH4 concentration also enhances spontaneous nucleation. Addition of N2 and CO2 into CH4/H2 gas mixture also enhances the growth rate. Nitrogen shifts the film morphology from micro- to nanocrystalline. For enough high methane concentration (>5% CH4), increasing of nitrogen further shifts the diamond growth in formation of nanowire like structures. In opposite to the nitrogen addition, adding CO2 to the gas mixture improved the film quality. In this case, a higher methane concentration can be used to increase the growth rate while keeping good enough film quality.
    Trvalý link: http://hdl.handle.net/11104/0237014

     
     
Počet záznamů: 1  

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