Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation

0431153 - ÚMCH 2015 RIV CH eng J - Článek v odborném periodiku
Todorov, R. - Petkov, K. - Kincl, Miloslav - Černošková, E. - Vlček, Milan - Tichý, Ladislav
Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation.
Thin Solid Films. Roč. 558, 2 May (2014), s. 298-305. ISSN 0040-6090. E-ISSN 1879-2731
Institucionální podpora: RVO:61389013
Klíčová slova: chalcogenide glasses * thin films * optical properties
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 1.759, rok: 2014

This paper deals with the properties of the thin films from GeS2 - In2S3 system deposited by thermal co-evaporation of GeS2 and In2S3. The refractive index, n and the optical band gap, Egopt were calculated from the transmittance and reflectance spectra. The far-infrared spectra indicated that the indium participates in the glass network of the layers from Ge - S - In system in four coordinated InS4/2- tetrahedral and six-coordinated InS6/23- octahedral units. The changes in infrared spectra after annealing of the thin films evidence an increase of population of ethane-like S3Ge-GeS3 units and/or structural transformations InS4- → InS63+.
Trvalý link: http://hdl.handle.net/11104/0235774