Počet záznamů: 1  

On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells

  1. 1.
    0427003 - FZU-D 2015 RIV NL eng J - Článek v odborném periodiku
    Qiu, Y. - Kunz, O. - Fejfar, Antonín - Ledinský, Martin - Teik Chan, B. - Gordon, I. - Van Gestel, D. - Venkatachalm, S. - Egan, R.
    On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells.
    Solar Energy Materials and Solar Cells. Roč. 122, MAR (2014), s. 31-39. ISSN 0927-0248
    Grant CEP: GA MŠk 7E10061; GA MŠk(CZ) LM2011026
    GRANT EU: European Commission(XE) 240826 - PolySiMode
    Institucionální podpora: RVO:68378271
    Klíčová slova: silicon * thin films * polycrystalline * hydrogenation * Raman spectroscopy
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 5.337, rok: 2014
    http://www.sciencedirect.com/science/article/pii/S0927024813006016

    The hydrogen plasma passivation of thin film polycrystalline silicon (pc-Si) was investigated in conjunction with plasma texturing proces to make efficient heterojunction solar cells. Combining plasma pre-texturing with high-temperature hydrogenation, the best 2 µm-thick pc-Si heterojunction solar cell reaches an efficiency of 8.54%.
    Trvalý link: http://hdl.handle.net/11104/0232607