Experimental and simulation study of stress in diamond grown on silicon

0424591 - FZÚ 2014 US eng A - Abstrakt
Jirásek, Vít - Varga, Marián - Ledinský, Martin - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander
Experimental and simulation study of stress in diamond grown on silicon.
4 IC4N (International conference nanoparticles and nanomaterials to nanodevices and nanosystems /4./) Book of Abstracs. Arlington: University of Texas, 2013 - (Meletis, E.; Kanellopoulos, N.; Politis, C.; Schommers, W.). s. 74-74
[IC4N 2013 International conference from nanoparticles and nanomaterials to nanodevices and nanosystems /4./. 16.06.2013-20.06.2013, Corfu]
Grant CEP: GA ČR(CZ) GBP108/12/G108; GA MŠMT LH12186
Institucionální podpora: RVO:68378271
Klíčová slova: diamond films * Raman spectroscopy * stress * FEM simulations
Kód oboru RIV: JL - Únava materiálu a lomová mechanika

In this contribution is studied the stress formed in thin nanocrystalline diamond films deposited on the silicon substrate. The stress is experimentally determined from the Raman shifts of diamond peak, while the theoretical thermal bi-axial stress component is calculated by finite-elements (FEM) method. The stress dependence on the planar geometry is investigated for three configurations: continuous diamond films grown on Si (10 x 10 mm2), b) 100 μm wide diamond strips and c) 200 μm wide diamond strips. Diamond thin films were grown by the standard microwave plasma CVD process. The stripes were prepared either by the selective area deposition (SAD) or by the post-growth etching technique (PGE), respectively.
Trvalý link: http://hdl.handle.net/11104/0230694