AlGaN/GaN high electron mobility transistors for high temperatures

0424328 - FZÚ 2014 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Vanko, G. - Lalinský, T. - Ižák, Tibor - Vojs, M. - Vincze, A. - Dobročka, E. - Vallo, M. - Dzuba, J. - Rýger, I. - Kromka, Alexander
AlGaN/GaN high electron mobility transistors for high temperatures.
Perspektívne vákuové metódy a technológie (Perspective vacuum methods and technologies). Bratislava: Slovenská vákuová spoločnosť, 2013 - (Vojs, M.; Veselý, M.; Vincze, A.), s. 55-59. ISBN 978-80-971179-2-4.
[School of Vacuum Technology /16./ (Perspektívne vákuové metódy a technológie. Perspective vacuum methods and technologies). Štrbské Pleso (SK), 10.10.2013-13.10.2013]
Institucionální podpora: RVO:68378271
Klíčová slova: electron mobility * crystalline diamond substrates * GaN
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

This work deals with design, technology and characterization of high temperature stable AlGaN/GaN based high electron mobility transistors (HEMTs) able to work in harsh environments. The originality of the concept proposal consists in research of new (a) progressive thin layers based on metal oxides and/or their combinations for Schottky gate electrodes, (b) metal stacks with improved surface morphology for ohmic contacts with low specific contact resistivity values and (c) possibilities of hybrid integration of the piezoelectric AlGaN/GaN material system with diamond layers in order to improve the heat dissipation in the channel of the HEMTs.
Trvalý link: http://hdl.handle.net/11104/0230412