0396844 - ÚFE 2014 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Lomov, A. A. - Grym, Jan - Nohavica, Dušan - Orehov, A.S. - Vasil'ev, A. L. - Novikov, D. V.
High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates.
International Conference Micro- and Nano-Electronics 2012 (Proc. SPIE 8700). BELLINGHAM: SPIE, 2013 - (Orlikovsky, A.). ISBN 9780819494870. ISSN 0277-786X.
[International Conference Micro- and Nano-Electronics 2012. Zvenlgorod (RU), 01.10.2012-5.10.2012]
Grant CEP: GA MŠMT LD12014
Institucionální podpora: RVO:67985882
Klíčová slova: Etching * Diffraction * Galllium arsenide
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

We investigated structural perfection of porous gallium arsenide layers formed in GaAs (001). Different modes of electrochemical etching of n-type GaAs(001) substrates in fluoride-iodide aqueous electrolytes were used to form porous layers. Their structural properties were investigated by high resolution X-ray and synchrotron radiation diffraction and electron microscopy (SEM, TEM) techniques. It was shown that a single current pulse with a high magnitude forms a discontinuous porous layer with a smooth surface. Subsequent etching with a relatively low current density forms a homogeneous porous structure in the depth with approximately 30% porosity. The porous layer thickness can be varied from a few microns to several tens of microns depending on the etching time. The lattice parameter of porous GaAs layers along the surface normal is decreased by a factor of 1.5×10-4 compared to the GaAs substrate. This contraction is related to the formation of vacancy type structural defects as revealed by the measurement of x-ray diffuse scattering
Trvalý link: http://hdl.handle.net/11104/0224551