Počet záznamů: 1  

Particle detectors based on InP Schottky diodes

  1. 1. 0387285 - URE-Y 2013 RIV GB eng J - Článek v odborném periodiku
    Yatskiv, Roman - Grym, Jan
    Particle detectors based on InP Schottky diodes.
    Journal of Instrumentation. Roč. 10, č. 7 (2012), C100051-C100055. ISSN 1748-0221
    Grant CEP: GA MŠk(CZ) OC10021; GA MŠk LD12014
    Institucionální podpora: RVO:67985882
    Klíčová slova: Particle detector * High purity InP layer * Schottky diode
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    Impakt faktor: 1.869, rok: 2011

    A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed
    Trvalý link: http://hdl.handle.net/11104/0220242