Mn doping of GaN layers grown by MOVPE

0385913 - FZÚ 2013 RIV CZ eng J - Článek v odborném periodiku
Šimek, P. - Šofer, Z. - Sedmidubský, D. - Jankovský, O. - Hejtmánek, Jiří - Maryško, Miroslav - Václavů, M. - Mikulics, M.
Mn doping of GaN layers grown by MOVPE.
Ceramics - Silikáty. Roč. 56, č. 2 (2012), s. 122-126. ISSN 0862-5468. E-ISSN 1804-5847
Grant CEP: GA ČR GA104/09/0621
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: metalorganic vapor phase epitaxy * nitrides * magnetic materials * semiconducting III-V materials
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.418, rok: 2012

In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.
Trvalý link: http://hdl.handle.net/11104/0215069