0384858 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Bartoš, Igor - Cukr, Miroslav - Jiříček, Petr
Layer-resolved photoelectron diffraction: electron attenuation anisotropy in GaAs.
Journal of Electron Spectroscopy and Related Phenomena. Roč. 185, 5-7 (2012), s. 184-187. ISSN 0368-2048. E-ISSN 1873-2526
Grant ostatní: AV ČR(CZ) AP0701
Program: Akademická prémie - Praemium Academiae
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: low-energy electron attenuation in GaAs * layer-resolved photoelectron diffraction * synchrotron radiation
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.706, rok: 2012 ; AIS: 0.551, rok: 2012
DOI: https://doi.org/10.1016/j.elspec.2012.06.011

Photoelectron diffraction was used to get polar plots of the low-energy photoemission intensities from AlAs monolayer buried 2, 3 and 4 GaAs monolayers below the GaAs(0 0 1)-c(4×4) reconstructed surface.
Trvalý link: http://hdl.handle.net/11104/0214346