Structural and optical properties study of GaN implanted by various rare earth ions

0382664 - ÚJF 2013 CN eng C - Konferenční příspěvek (zahraniční konf.)
Macková, Anna - Malinský, Petr - Sofer, Z. - Sedmidubský, D. - Kormunda, M.
Structural and optical properties study of GaN implanted by various rare earth ions.
Program and Abstract Book. 2012.
[The 18th International Conference on Ion Beam Modifications of Materials. Qingdao (CN), 02.09.2012-07.09.2012]
Grant CEP: GA AV ČR(CZ) 106/09/0125
Institucionální podpora: RVO:61389005
Klíčová slova: implantation * RBS channelling
Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače

We present a structural study of rare earth elements implanted GaN layers grown by low pressure metal organic vapour phase epitaxy on c-plane sapphire substrates. Sm, Tm, Eu, Tb and Ho ions were implanted with energies of 200 and 400 keV and fluences ranging from 1×1015 to 1×1016 cm−2 into GaN with (0001) crystallographic orientation. The chemical composition and concentration profiles of ion-implanted layers were studied by Rutherford Back-Scattering spectrometry (RBS) and compared to SRIM 2008 simulations. With the increasing fluence and lower ion energy used at implantation we observed disagreement of experimental and predicted depth profiles of implanted ions, which is connected with the structural changes of the surface. The structural properties of the layers were characterized by RBS channelling, Raman spectroscopy and X-ray diffraction. AFM was used to determine the surface morphology changes after implantation. Structural analysis shows the amount of disordered atoms in the surface layer and in the depth of projected range of implanted ions. The comparable density of disordered atoms exhibit samples implanted by Tb, Sm and Eu, 400 keV implanted at fluence at 5x1015 cm-2 in depth appropriate to the projected range Rp and Ga enrichment is observed in the surface layer. The lowest level of modification of the surface layer in the Rp depth exhibit GaN implanted by Tb and Eu, 400 keV using fluence 1x1015 cm-2.
Trvalý link: http://hdl.handle.net/11104/0212821