Strain Mapping by Scanning Low Energy Electron Microscopy

0367893 - ÚPT 2012 RIV CH eng C - Konferenční příspěvek (zahraniční konf.)
Mikmeková, Šárka - Man, O. - Pantělejev, L. - Hovorka, Miloš - Müllerová, Ilona - Frank, Luděk - Kouřil, M.
Strain Mapping by Scanning Low Energy Electron Microscopy.
Materials Structure and Micromechanics of Fracture VI (Key Engineering Materials Vol. 465). Zurich: Trans Tech Publications, 2011 - (Šandera, P.), s. 338-341. ISBN 978-3-03785-006-0. ISSN 1662-9795.
[MSMF-6: Materials Structure and Micromechanics of Fracture VI. Brno (CZ), 28.06.2010-30.06.2010]
Grant CEP: GA AV ČR IAA100650902; GA MŠMT OE08012
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: scanning low energy electron microscopy (SLEEM) * contrast of crystal orientation * microscopic strain
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.
Trvalý link: http://hdl.handle.net/11104/0202409