Oxygen precipitation studied by x-ray diffraction techniques

0362811 - ÚFM 2012 RIV CH eng J - Článek v odborném periodiku
Meduňa, M. - Caha, O. - Růžička, J. - Bernatová, S. - Svoboda, Milan - Buršík, Jiří
Oxygen precipitation studied by x-ray diffraction techniques.
Solid State Phenomena. 178 -179, - (2011), s. 325-330. ISSN 1012-0394
Grant CEP: GA ČR(CZ) GA202/09/1013
Výzkumný záměr: CEZ:AV0Z20410507
Klíčová slova: Czochralski silicon * oxygen precipitates * x-ray Laue diffraction
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We report on study of oxygen precipitates grown of Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry. The analysis of diffraction curves in Laue geometry was done using Takagi equations and statistical dynamical theory of diffraction. These techniques allow us to determine as the radius of defect area as the defect concentrations from measurement in Laue geometry. These results obtained on silicon wafers exposed to two-step and three-step treatments were compared with other experimental techniques including transmission electron microscopy and infrared absorption spectroscopy, while only the largest precipitates are detected by other techniques. The results of all methods are good agreement.
Trvalý link: http://hdl.handle.net/11104/0199018