0359533 - ÚFCH JH 2012 RIV US eng J - Článek v odborném periodiku
Kalbáč, Martin - Farhat, H. - Kong, J. - Janda, Pavel - Kavan, Ladislav - Dresselhaus, M. S.
Raman Spectroscopy and in Situ Raman Spectroelectrochemistry of Bilayer 12C/13C Graphene.
Nano Letters. Roč. 11, č. 5 (2011), s. 1957-1963. ISSN 1530-6984. E-ISSN 1530-6992
Grant CEP: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT ME09060; GA MŠMT LC510; GA ČR GC203/07/J067; GA ČR GAP204/10/1677
Výzkumný záměr: CEZ:AV0Z40400503
Klíčová slova: graphene * bilayer * Raman Spectroscopy
Kód oboru RIV: CG - Elektrochemie
Impakt faktor: 13.198, rok: 2011 ; AIS: 5.07, rok: 2011
DOI: https://doi.org/10.1021/nl2001956

Bilayer graphene was prepared by the subsequent deposition of a 13C single-layer graphene and a 12C single-layer graphene on top of a SiO2/Si substrate. The bilayer graphene thus prepared was studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The Raman frequencies of the 13C graphene bands are significantly shifted with respect to those of 12C graphene, which allows us to investigate the single layer components of bilayer graphene individually. It is shown that the bottom layer of the bilayer graphene is significantly doped from the substrate, while the top layer does not exhibit a signature of the doping from the environment. The electrochemical doping has the same effect on the charge carrier concentration at the top and the bottom layer despite the top layer being the only layer in contact with the electrolyte.
Trvalý link: http://hdl.handle.net/11104/0197308