The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

0353061 - ÚFCH JH 2011 RIV US eng J - Článek v odborném periodiku
Kalbáč, Martin - Reina-Cecco, A. - Farhat, H. - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene.
ACS Nano. Roč. 4, č. 10 (2010), s. 6055-6063. ISSN 1936-0851. E-ISSN 1936-086X
Grant CEP: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT ME09060; GA MŠMT LC510; GA ČR GC203/07/J067; GA ČR GAP204/10/1677
Výzkumný záměr: CEZ:AV0Z40400503
Klíčová slova: graphene * Raman spectroscopy * spectroelectrochemistry
Kód oboru RIV: CG - Elektrochemie
Impakt faktor: 9.855, rok: 2010

Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with Increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.
Trvalý link: http://hdl.handle.net/11104/0192407