Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films

0328405 - ÚMCH 2010 US eng C - Konferenční příspěvek (zahraniční konf.)
Wágner, T. - Gutwirth, J. - Orava, J. - Přikryl, J. - Bezdička, Petr - Bartoš, M. - Vlček, Milan - Frumar, M.
Characterization of RF magnetron sputtered Se-doped Ge2Sb2.3Te5 thin films.
Phase-Change Materials for Reconfigurable Electronics and Memory Applications. Warrendale: Materials Research Society, 2008 - (Edwards, A.; Fons, P.; Raoux, S.; Taylor, P.; Taylor, M.), G05-07/1-G05-07/6. 1072. ISBN N.
[Spring Meeting MRS - Phase-Change Materials for Reconfigurable Electronics and Memory Applications. San Francisco (US), 24.03.2008-27.03.2008]
Grant CEP: GA ČR GA203/06/1368; GA ČR GA203/06/0627; GA MŠMT LC523
Výzkumný záměr: CEZ:AV0Z40320502; CEZ:AV0Z40500505
Klíčová slova: RF magnetron sputtering technique
Kód oboru RIV: CA - Anorganická chemie
http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12444&DID=214397&action=detail

RF magnetron sputtering technique has been used to deposit new films potentially applicable in phase-change memories. Ge2Sb2Te5 seems to be promising material, but it is not clear whether it is optimum composition for such application. We studied different deposition condition and deposition of films doped by excess of Sb and doped also by Se, which equally replaces Te atoms compare to Ge2Sb2Te5.
Trvalý link: http://hdl.handle.net/11104/0174727