0304222 - URE-Y 20030126 RIV DE eng J - Článek v odborném periodiku
Žďánský, Karel - Hlídek, P. - Pekárek, Ladislav
Behaviour of manganese in InP compared with other impurities of 3d transition metals.
Physica Status Solidi A. Roč. 195, č. 1 (2003), s. 74-80. ISSN 0031-8965.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
Grant CEP: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: deep levels * semiconductor growth * Hall effect
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.950, rok: 2003

InP single crystals doped with Mn, Fe, Ti and Ni were studied by infrared absorption spectroscopy and by temperature dependent Hall measurements. Absorption spectra indicate a special electron configuration of Mn bound with a shallow hole and on regular partly occupied 3d shells of Fe and Ti. Electron mobility shows large decline at low temperatures in the cases of Fe, Ti and Ni doping. The reduction of mobility demonstrates large electron scattering on transition metal ions with partly occupied d-shells.
Trvalý link: http://hdl.handle.net/11104/0114363