0304215 - URE-Y 20030110 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Nohavica, Dušan - Krier, A.
Surface to bulk vacancy conversion in GaAs - discussion of the problem.
Prague: Institute of Physics AS CR, 2003. In: ECOSS 22. - (Cháb, V.; Maca, F.; Prince, K.; Wandelt, K.), s. -
[European Conference on Surface Science ECOSS /22./. Prague (CZ), 07.09.2003-12.09.2003 (K)]
Grant CEP: GA AV ČR IAA2067901
Grant ostatní: EPSRC(GB) GR/R43334/01
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: MOCVD
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

In the contribution the growth condition influence in MOVPE, MBE and ALE on the surface vacancies conversion to the bulk one was discussed. We adopted Van Vechten's concept supposing comparison of the reconstruction velocity and growth rate as leading parameters of the conversion. We try to consider reaction kinetics in Farrell's et al. surface vacancies fade away mechanisms during MBE growth on the reconstructed surfaces.
Trvalý link: http://hdl.handle.net/11104/0114356