0304152 - URE-Y 20030025 RIV GB eng J - Článek v odborném periodiku
Žďánský, Karel - Pekárek, Ladislav - Hlídek, P.
Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.
Semiconductor Science and Technology. Roč. 18, č. 11 (2003), s. 938-944. ISSN 0268-1242. E-ISSN 1361-6641
Grant CEP: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
Výzkumný záměr: CEZ:MSM 113200002
Klíčová slova: deep levels * light absorption * Hall effect
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.603, rok: 2003

InP crystals were grown by Czochralski method from undoped InP melt or doped with Ca, Zn, Fe or Mn or co-doped with Ti and Zn. Crystals were annealed in phosphorus ambient for 95 h at 950.sup.o.sup.C and cooled slowly. Conversion to the semi-insulating state was studies by Hall measurements and low temperature optical absorption spectroscopy. The undoped samples with electron concentration below 1 x 10.sup.16.sup. cm.sup.-3.sup. became semiinsulating due to decreasing content of shallow donors and increasing content of the active Fe.
Trvalý link: http://hdl.handle.net/11104/0114293