0304124 - URE-Y 20030020 RIV NL eng J - Článek v odborném periodiku
Horvath, Zs. J. - Rakovics, V. - Szentpáli, B. - Püspöki, S. - Žďánský, Karel
InP Schotky junctions for zero bias detector diodes.
Vacuum. Roč. 71, 1/2 (2003), s. 113-116. ISSN 0042-207X. E-ISSN 1879-2715.
[Joint Vacuum Conference JVC /9./. Schloss Seggau, Leibnitz by Graz, 16.06.2002-20.06.2002]
Grant CEP: GA AV ČR KSK1010104 Projekt 04/01:4044
Grant ostatní: OTKA(HU) T035272
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: Schottky barriers * semiconductor technology
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.612, rok: 2003

InP Schottky junctions was prepared by using Cr+Au or Ag metallization and different surface pretreatment of InP to obtain good junctions suitable for application as zero bias detectors. Electrical characteristics were studied by current-voltage and capacitance voltage measurements in the temperature range of 80-320 K. Depending on the preparation conditions, the diodes exhibited a Schottky barrier height in the range of 0.38-0.49 eV with room temperature ideality factors in the range of 1.08-1.23.
Trvalý link: http://hdl.handle.net/11104/0114265