0304105 - URE-Y 20030017 RIV DE eng J - Článek v odborném periodiku
Vaniš, Jan - Chow, D. H. - Pangrác, Jiří - Šroubek, Filip - McGill, T. C. - Walachová, Jarmila
Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode.
Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 986-991. ISSN 1610-1634.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
Grant CEP: GA AV ČR KSK1010104 Projekt 04/01:4045
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: field emission electron microscopy * semiconductor quantum wells * spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The characterization of InAs/AlSb double tunnel barrier heterostructure with the well thickness of 12nm and symmetric barrier thickness of 2nm by ballistic electron emission microscopy/spectroscopy is presented. For the measurements the top InAs layer of heterostructure is used as the base electrode.
Trvalý link: http://hdl.handle.net/11104/0114247