0303871 - URE-Y 20010053 RIV HU eng C - Konferenční příspěvek (zahraniční konf.)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Influence of Pr, Tb and Yb on physical properties of InP layers.
Miskolc: University of Miskolc, Innovation and Technology Transfer Centre, 2001. ISBN 963 661 482 2. In: Third International Conference of PHD Students. - (Lehoczky, L.; Kalmár, L.), s. 157-162
[International Conference of PHD Students /3./. Miskolc (HU), 13.08.2001-19.08.2001 (K)]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

A series of high purity InP layers were grown by the LPE technique from the melts containing besides essential components also Pr, Tb and Yb admixtures. The concentration of defects observed by SEM was decreased by a half order of magnitude. The purification effect was proved by electrical and optical properties. The concentration of shallow impurities was decreased by up to three orders of optical properties. The concentration of shallow impurities was decreased by up to three orders of magnitude. PL spectra were markedly narrowed and fine spectral features were resolved.
Trvalý link: http://hdl.handle.net/11104/0114055