0303845 - URE-Y 20010117 RIV GB eng J - Článek v odborném periodiku
Žďánský, Karel - Pekárek, Ladislav - Kacerovský, Pavel
Evaluation of semi-insulating Ti-doped and Mn-doped InP for radiation detection.
Semiconductor Science and Technology. Roč. 16, č. 12 (2001), s. 1002-1007. ISSN 0268-1242. E-ISSN 1361-6641
Grant CEP: GA ČR GA106/99/1563; GA AV ČR KSK1010601 Projekt 7/96/K:4074
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductor materials * particle detectors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.079, rok: 2001

Undoped InP and doped with Fe, co-doped with Zn and Ti and doped with Mn were grown. Hall measurements and DLTS were used for characterization. Two electron traps were found in undoped InP whose concentration was suppressed in Mn doped InP. Binding energies of Fe, Ti and Mn deep level impurities were determined from temperature dependent Hall measurements. Resistivity of InP:Ti at the lowered temperature 230 K (10.sup.6.sup. ęm) and small hole capture rate of Ti makes this material suitable for radiation detection.
Trvalý link: http://hdl.handle.net/11104/0114029