0303796 - URE-Y 20010091 RIV GB eng J - Článek v odborném periodiku
Kosíková, Jitka - Leitner, J. - Pangrác, Jiří - Melichar, Karel - Jurek, K. - Drbohlav, Ivo - Stejskal, J.
Ga_1-xIn_xSB-MOVPE growth and thermodynamic model.
Semiconductor Science and Technology. Roč. 16, č. 9 (2001), s. 759-762. ISSN 0268-1242. E-ISSN 1361-6641
Grant CEP: GA ČR GA202/98/P254
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductor growth * semiconductor materials * thermodynamics
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.079, rok: 2001

The aim of this work was to prepare good-quality Ga_1-xIn_xSb ternary laeyrs using MOVPE growth. The quality of the layer surfaces was inspected by atomic force microscopy. The experimental results obtained were compared with the calculated deposition diagrams. The composition of grown ternary layers was determined using x-ray microanalysis. Dependence of the solid-phase composition on the gaseous-phase composition in the system was compared with the calculated results on the bases of the thermodynamic model.
Trvalý link: http://hdl.handle.net/11104/0113980