0303794 - URE-Y 20010036 RIV CH eng J - Článek v odborném periodiku
Žďánský, Karel - Zavadil, Jiří - Procházková, Olga - Gladkov, Petar
P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. B80, 1/3 (2001), s. 10-13. ISSN 0921-5107. E-ISSN 1873-4944.
[EXMATEC 2000 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /5./. Heraklion, 21.05.2000-24.05.2000]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductor materials * luminescence
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

InP was grown by LPE on semi-insulating InP:Fe with Pr in the melt. Hall effect measurements revealed p-type conductivity with the hole concentration 6x10.sup.14.sup. cm.sup.-3.sup. and mobility 150 cm.sup.2.sup.V.sup.-1.sup.s.sup.-1.sup. at the room temperature. The energy 223 meV of the dominant acceptor was determined from the temperature dependence of the hole concentration. A photoluminescence line was found at 1.195 eV, close to the previously estimated no-phonon line of Ge acceptor. Hence Ge acceptors cause the p-type conductivity of the grown InP.
Trvalý link: http://hdl.handle.net/11104/0113978