0303687 - URE-Y 20000044 RIV CN eng J - Článek v odborném periodiku
Zavadil, Jiří - Procházková, Olga - Žďánský, Karel
Rare earth elements in semiconductors. Characterization-Part II.
Science Foundation in China. Roč. 7, č. 2 (1999), s. 48-51
[Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./. Beijing, 13.09.1999-14.09.1999]
Grant CEP: GA ČR GA102/99/0341
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: rare earth compounds * III-V semiconductors * photoluminescence
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The influence of rare-earth elements (Nd, Pr and Yb) addition during the LPE growth of InP layers is reported. Temperature dependent Hall effect shows quite dramatic impact on shallow impurity and free-carrier concentrations. Low-temperature photoluminescence (PL) spectra permit an individual determination of the acceptor and donor binding energies. Thermal quenching effect of Yb.sup.3+.sup. luminescence has been observed and discussed in terms of RE excitation and de-excitation mechanisms.
Trvalý link: http://hdl.handle.net/11104/0113874