0303686 - URE-Y 20000043 RIV CN eng J - Článek v odborném periodiku
Žďánský, Karel - Procházková, Olga - Nohavica, Dušan
Temperature dependence of electron Hall concetration in n-type InP and n-type In_0.5Ga_0.5P.
Science Foundation in China. Roč. 7, č. 2 (1999), s. 25-29
[Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./. Beijing, 13.09.1999-14.09.1999]
Grant CEP: GA ČR GA102/99/0341
Grant ostatní: AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: III-V semiconductors * Hall effect
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Temperature dependence of electron Hall concentration is calculated is nondegenerate statistics by taking into account two types of donors and an acceptor and with electron transport in the impurity band of shallow donors in parallel with the conduction band considered. The experimental dependence is well expressed by the calculated one; the concentrations of the two types of donors and of acceptors are evaluated for sets of InP and In_0.5Ga_0.5P layers grown by LPE on semi-insulating substrates.
Trvalý link: http://hdl.handle.net/11104/0113873