Počet záznamů: 1  

Rare-gas implantation and damage of fullerene at high fluence

  1. 1.
    0185082 - UJF-V 20000252 RIV US eng J - Článek v odborném periodiku
    Hnatowicz, Vladimír - Vacík, Jiří - Fink, D. - Klett, R.
    Rare-gas implantation and damage of fullerene at high fluence.
    Fullerene Science and Technology. Roč. 8, - (2000), s. 279-287. ISSN 1064-122X
    Grant CEP: GA ČR GA202/96/0077; GA AV ČR KSK1048601
    Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače
    Impakt faktor: 0.846, rok: 2000

    100 keV Ar.SUP.+ and Kr.SUP.+ ions were implanted into fullerene films up to fluences which exceed the fullerene destruction threshold. The depth profiles of implanted atoms were measured using conventional RBS techniques. The depth profile parameters differ significantly from theoretical estimates and with increasing ion fluence the depth profiles moveto the sample surface. This suggests a high degree of fullerene sputtering. In annealing experiments at temperatures up ti 375 .SUP.o C no significant changes of the depth profiles were observed.
    Trvalý link: http://hdl.handle.net/11104/0081502

     
     

Počet záznamů: 1  

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