0183955 - UJF-V 970059 RIV GB eng J - Článek v odborném periodiku
Kozlov, I. P. - Odzhaev, V. B. - Popok, V. N. - Hnatowicz, Vladimír
Annealing of radiation defects in dual-implanted silicon.
Semiconductor Science and Technology. Roč. 11, - (1996), s. 355-358. ISSN 0268-1242. E-ISSN 1361-6641
Grant CEP: GA AV ČR KSK1010601
Impakt faktor: 1.318, rok: 1996
Trvalý link: http://hdl.handle.net/11104/0080414