0181165 - UFCH-W 20010076 RIV NL eng J - Článek v odborném periodiku
Morita, H. - Ono, H. - Bastl, Zdeněk - Pola, Josef
Laser-induced Thin Film Formation from a Gaseous Mixture of Trimethylsilylacetylene and Methyl Acrylate.
Journal of Photochemistry and Photobiology A-Chemistry. Roč. 140, č. 3 (2001), s. 243-248. ISSN 1010-6030. E-ISSN 1873-2666
Výzkumný záměr: CEZ:AV0Z4040901
Klíčová slova: N2 laser-induced film formation * trimethylsilylacetylene * methyl acrylate
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 1.038, rok: 2001

Under irradiation with N2 laser light gaseous trimethylsilylacetylene(TMeSiA) and a gaseous mixture of TMeSiA and methylacrylate(MA) produced thin solid films on quartz window of an irradiation vessel. From the analysis of FT-IR and X-ray photoelectron spectra of the deposited films it was shown that Si-C bond of TMeSiA was cleaved by two photon absorption of laser light to produce TMeSi radical and the silanes. TMeSi radical reacted with MA at C=C and C=O bonds to produce Si-C and Si-O bond in the film.
Trvalý link: http://hdl.handle.net/11104/0001867