0161441 - SLCHPL-S 20010010 RIV SIGLE DE eng C - Konferenční příspěvek (zahraniční konf.)
Plecháček, Tomáš - Navrátil, Jiří - Horák, Jaromír
The influence of point defects concentration on Hall mobility in Bi2-xSbxSex crystals.
Proceedings of Sixth European Workshop on Thermoelectrics. Freiburg: Fraunhofer Institute of Physical Measurement Techniques IPM, 2001, s. 164-167.
[Sixth European Workshop on Thermoelectrics. Fraunhofer (DE), 20.09.2001-21.09.2001]
Grant CEP: GA ČR GV202/98/K002
Klíčová slova: Bi2-xSbxSe3 single crystals * transport propetries * lattice defects
Kód oboru RIV: CA - Anorganická chemie

Single crystals Bi2-xSbxSe3 (x=0,0-0,6) were prepared using a modified Bridgeman method. Samples were characterized by measurement of some transport and optical parameters. Obtained dependencies were explained using a model of point defects.
Trvalý link: http://hdl.handle.net/11104/0058789