0134194 - FZU-D 20030087 RIV CZ eng J - Článek v odborném periodiku
Gabáni, S. - Flachbart, K. - Pavlík, V. - Orendáč, M. - Konovalova, E. - Paderno, Y. - Šebek, Josef
Investigation of in-gap states in SmB₆.
Czechoslovak Journal of Physics. Roč. 52, č. 2 (2002), s. 279-282. ISSN 0011-4626.
[Czech and Slovak Conference on Magnetism /11./. Košice, 20.08.2001-23.08.2001]
Grant ostatní: VEGA(SK) 2-1148-01
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: electronic band structure * electronic transport * heat capacity
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.311, rok: 2002

Low temperature properties of the narrow-gap semiconductor have been investigated by means of electrical resistivity and specific heat measurements. The observed behavior can be attributed to the formation of a metallic-like coherent state within the in-gap states of this compound.
Trvalý link: http://hdl.handle.net/11104/0000669