0134081 - FZU-D 20020370 RIV IT eng C - Konferenční příspěvek (zahraniční konf.)
Toušková, J. - Kindl, Dobroslav - Samokhin, Jevgen - Toušek, J. - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav - Výborný, Zdeněk
Transport mechanism and spectral characteristics of GaSb/GaAs heterostructures prepared by MOVPE.
Seventh European Photovoltaic Solar Energy Conference. Florence: WIPMunich and ETAFlorence, 2002 - (McNelis, B.; Palz, W.; Ossenbrink, H.; Helm, P.), s. 146-148. ISBN 88-900442-3-3.
[European Photovoltaic Solar Energy Conference /17./. Munich (DE), 22.10.2001-26.10.2001]
Grant CEP: GA ČR GA102/99/0414
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: thermophotovoltaics * gallium arsenide based cells * GaSb
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The purpose of our work was the evaluation of GaSb/GaAs heterostructures grown on GaAs substrateas for the thermovoltaics.heterojunctions p-GaSb/n-GaAs with p-layer prepared by MOVPE method at growth temperatures from 500 to 560 o C were investigated. Our results show that p-GaSb/n-GaAs heterojunctions prepared by this MOVPE method are not enough suitable for use in TPV.
Trvalý link: http://hdl.handle.net/11104/0032018