0134080 - FZU-D 20020369 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Štěpánek, Bedřich - Šestáková, Věra - Šesták, Jaroslav
Annealing of GaSb single crystals in ionised hydrogen atmosphere.
0-8194-4115-5. In: Growth, Characterization, and Applications of Single Crystals. Bellingham: SPIE International Society for Optical Engineering, 2001 - (Rogalski, A.; Adamiec, K.; Madejczyk, P.), s. 46-49. Proceedings of SPIE., 4412. ISSN 0277-786X.
[International Conference on Solid State Crystals 2000. Zakopane (PL), 09.10.2000-13.10.2000]
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: GaSb * single crystals * improvement of properties
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

GaSb undoped wafers were annealed in flowing ionized hydrogen atmosphere and the free carrier concentration and resistivity were measured. It was found that the resistivity increased and free carrier concentration decreased at 150 o C.
Trvalý link: http://hdl.handle.net/11104/0032017