0134052 - FZU-D 20020340 RIV GB eng J - Článek v odborném periodiku
Fojtík, Petr - Dohnalová, Kateřina - Mates, Tomáš - Stuchlík, Jiří - Gregora, Ivan - Chval, Jindřich - Fejfar, Antonín - Kočka, Jan - Pelant, Ivan
Rapid crystallization of amorphous silicon at room temperature.
Philosophical Magazine B: Physics of Condensed Matter, Statistical Mechanics, Electronic, Optical, and Magnetic Properties. Roč. 82, č. 17 (2002), s. 1785-1793. ISSN 0141-8637
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: hydrogenated amorphous silicon * metal-induced solid-phase crystallization * nickel surface * photovoltaics
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.158, rok: 2002

A way which thin films of hydrogenated amorphous silicon can be instantaneously crystallized at room temperature is reported.The metal-induced solid-phase crystallization method with nickel surface coverage is used.
Trvalý link: http://hdl.handle.net/11104/0031992