0133889 - FZU-D 20020172 RIV US eng J - Článek v odborném periodiku
Švrček, Vladimír - Pelant, Ivan - Fojtík, Petr - Fejfar, Antonín
Surface photovoltage measurements in ćc-Si:H: manifestation of the bottom space charge region.
Journal of Applied Physics. Roč. 92, č. 5 (2002), s. 2323-2329. ISSN 0021-8979. E-ISSN 1089-7550
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: ćc-Si:H * surface photovoltage measurements * mathematical model
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.281, rok: 2002

We discuss results of surface photovoltage (U) measurements for d=10ćm thick layers of undoped hydrogenated microcrystalline silicon. By applying excitation with low energetic photons a photovolatge peak appears on a curve U=u(ŕ). We present a mathematical model that enable us to link this peak to photocharge separation in the bottom space charge region at the interface ćc-Si:H/substrat.
Trvalý link: http://hdl.handle.net/11104/0031838