0133858 - FZU-D 20020037 RIV DE eng J - Článek v odborném periodiku
Pelant, Ivan - Fojtík, Petr - Luterová, Kateřina - Kočka, Jan - Poruba, Aleš - Štěpánek, J.
Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.
Applied Physics A - Materials Science & Processing. Roč. 74, - (2002), s. 557-560. ISSN 0947-8396. E-ISSN 1432-0630
Grant CEP: GA AV ČR IAA1010809; GA ČR GA202/98/0669
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: crystallization * hydrogenated amorphous silicon * metal-induced crystallization
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.231, rok: 2002

A novel simple method of crystallization of hydrogenated amorphous siliocm thin films is described. We studied a metal-induced crystallization enhanced by a dc electric field in sandwich p + -i-n + structures.
Trvalý link: http://hdl.handle.net/11104/0000638