0133787 - FZU-D 20020066 RIV NL eng J - Článek v odborném periodiku
Dederichs, P. H. - Mavropoulos, Ph. - Wunnicke, O. - Papanikolaou, N. - Bellini, V. - Zeller, R. - Drchal, Václav - Kudrnovský, Josef
Importance of complex band structure and resonant states for tunneling.
Journal of Magnetism and Magnetic Materials. Roč. 240, - (2002), s. 108-113. ISSN 0304-8853. E-ISSN 1873-4766
Grant CEP: GA AV ČR IAA1010829; GA ČR GA202/00/0122; GA MŠMT OC P5.30
Grant ostatní: TSR(XX) 01398
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: magnetoresistance * tunneling * band structure * interface effects
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.046, rok: 2002

The paper aims at understanding the tunneling process in epitaxial magnetic tunnel junctions. We stress the importance of the complex band structure of the insulator for the tunneling of the metal electrons. We discuss the role of resonant interface states for tunneling.
Trvalý link: http://hdl.handle.net/11104/0031743