0133761 - FZU-D 20020142 RIV NL eng J - Článek v odborném periodiku
Němec, P. - Frumar, M. - Jedelský, J. - Jelínek, Miroslav - Lančok, Ján - Gregora, Ivan
Thin amorphous chalcogenide films prepared by pulsed laser deposition.
Journal of Non-Crystalline Solids. 299-302, - (2002), s. 1013-1017. ISSN 0022-3093. E-ISSN 1873-4812
Grant CEP: GA ČR GA203/00/0085; GA MŠMT LN00A028
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: amorphous chalcogenide films * Raman spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.435, rok: 2002

The structure of Ge-Ga-Se thin films was studied by Raman spectroscopy, GeSe_4/2 tetrahedra, edge-sharing Ge₂Se_8/2 bi-tetrahedra, some Ge-Ge and Ge-Ga or Ga-Ga as well as Se-Se structural units were revealed.
Trvalý link: http://hdl.handle.net/11104/0031720