0133578 - FZU-D 20010378 RIV US eng J - Článek v odborném periodiku
Němec, Hynek - Pashkin, Alexej - Kužel, Petr - Khazan, M. - Schnüll, S. - Wilke, I.
Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy.
Journal of Applied Physics. Roč. 90, č. 3 (2001), s. 1303-1306. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA MŠMT LN00A032
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: ultrafast dynamics of free carriers * GaAs * time-domain terahertz emission spectroscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.128, rok: 2001

Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175-250 C), the carrier mobility was also estimated.
Trvalý link: http://hdl.handle.net/11104/0031541