0133218 - FZU-D 20010010 RIV NL eng J - Článek v odborném periodiku
Wilk, A. - Genty, F. - Fraisse, B. - Boissier, G. - Grech, P. - Gazouli El, M. - Christol, P. - Oswald, Jiří - Šimeček, Tomislav - Hulicius, Eduard - Joullié, A.
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers.
Journal of Crystal Growth. Roč. 223, - (2001), s. 341-348. ISSN 0022-0248. E-ISSN 1873-5002
GRANT EU: European Commission(XE) BRPR970466 - ADMIRAL
Grant ostatní: XX(XC) BRITE-EURAM III
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.283, rok: 2001

The growth by solid source molecular beam epitaxy of type-II InAsSb/InAs multi-quantum well laser diodes on InAs has been studied. Mesa-stripe laser diodes processed from the epitaxied structures operated at 3.5 microm in pulsed regime up to 220 K, with a threshold current density of 130A/cm2 at 90 K and a peak optical power efficiency of 50mW/A/facet.
Trvalý link: http://hdl.handle.net/11104/0031200