0133087 - FZU-D 20000450 RIV NL eng J - Článek v odborném periodiku
Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard - Melichar, Karel - Vorlíček, Vladimír - Drbohlav, Ivo - Šimeček, Tomislav
InAs/GaAs multiple quantum dot structures grown by LP-MOVPE.
Thin Solid Films. Roč. 380, - (2000), s. 101-104. ISSN 0040-6090. E-ISSN 1879-2731
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.160, rok: 2000

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the pow pressuer metal-organic vapour phase epitaxy technique. Photoluminescence and atomic force microscopy were used as the main characterisation methods for the growth optimisation.
Trvalý link: http://hdl.handle.net/11104/0031075