0132911 - FZU-D 20000167 RIV US eng J - Článek v odborném periodiku
Joullié, A. - Skouri, E. M. - Garcia, M. - Grech, P. - Wilk, A. - Christol, P. - Baranov, A. - Behres, A. - Kluth, J. - Stein, A. - Hulicius, Eduard - Šimeček, Tomislav
InAs(PSb) - based "W" quantum well laser diodes emitting near 3.3.mu.m.
Applied Physics Letters. Roč. 76, č. 18 (2000), s. 2499-2501. ISSN 0003-6951. E-ISSN 1077-3118
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.906, rok: 2000

Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quatum wells and broad InAsPSb waveguide were fabriacted by metalorganic vapor phase epitaxy on InAs substrates.
Trvalý link: http://hdl.handle.net/11104/0030905