0132784 - FZU-D 20000036 RIV NL eng J - Článek v odborném periodiku
Shah, A. - Vallat-Sauvain, E. - Torres, P. - Meier, J. - Kroll, U. - Hof, C. - Droz, C. - Goerlitzer, M. - Wyrsch, N. - Vaněček, Milan
Intrinsic microcrystalline silicon (.mu.c-Si:H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaic and optoelectronics.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. 69-70, - (2000), s. 219-226. ISSN 0921-5107. E-ISSN 1873-4944
Grant CEP: GA MŠMT OK 268
GRANT EU: European Commission(XE) JOR3970145 - NEST
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The development of microc-Si:H technology and the introduction of intrinsic [i] microc-Si:H as photovoltaically active naterial is retraced. The present paper will give an overview of the known properties related to this "new" thin -film semiconductor material.
Trvalý link: http://hdl.handle.net/11104/0030785