Magnetoresistance and electronic structure of asymmetric GaAs/Al.sub.0.3./sub.Ga.sub.0.7./sub.As double quantum wells in an in-plane or tilted magnetic field

Name: Magnetoresistance and electronic structure of asymmetric GaAs/Al.sub.0.3./sub.Ga.sub.0.7./sub.As double quantum wells in an in-plane or tilted magnetic field
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Makarovskij, Oleg N.; Smrčka, Ludvík; Vašek, Petr; Jungwirth, Tomáš; Cukr, Miroslav; Jansen, L.

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Magnetoresistance and electronic structure of asymmetric GaAs/Al.sub.0.3./sub.Ga.sub.0.7./sub.As double quantum wells in an in-plane or tilted magnetic field

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0132724 - FZU-D 20000280 RIV US eng J - Článek v odborném periodiku
Makarovskij, Oleg N. - Smrčka, Ludvík - Vašek, Petr - Jungwirth, Tomáš - Cukr, Miroslav - Jansen, L.
Magnetoresistance and electronic structure of asymmetric GaAs/Al_0.3Ga_0.7As double quantum wells in an in-plane or tilted magnetic field.
Physical Review. B. Roč. 62, č. 16 (2000), s. 10908-10913. ISSN 0163-1829
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.065, rok: 2000

Bilayer two-dimenional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements.
Trvalý link: http://hdl.handle.net/11104/0030730

Počet záznamů: 1