Počet záznamů: 1
Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane
- 1.0131953 - FZU-D 980050 RIV NL eng J - Článek v odborném periodiku
Mizushima, K. - Vvedensky, D. D. - Šmilauer, Pavel - Zangwill, A. - Zhang, J. - Joyce, B. A.
Effect of hydrogen on the growth kinetics of Si(001) during GSMBE from disilane.
Journal of Crystal Growth. 175-176, - (1997), s. 509-513. ISSN 0022-0248. E-ISSN 1873-5002
Impakt faktor: 1.259, rok: 1997
Trvalý link: http://hdl.handle.net/11104/0029995
Počet záznamů: 1