0101833 - UJF-V 20048250 RIV NL eng J - Článek v odborném periodiku
Macháč, P. - Peřina, Vratislav
Role of reactive metals in Ge/Pd/GaAs contact structures.
[Úloha reaktivních kovů v Ge/Pd/GaAs kontaktních strukturách.]
Microelectronic Engineering. Roč. 65, č. 3 (2003), s. 335-343. ISSN 0167-9317. E-ISSN 1873-5568
Grant CEP: GA AV ČR KSK1010104
Výzkumný záměr: CEZ:AV0Z1048901
Klíčová slova: gallium arsenide * ohmic contact * contact resistivity
Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače
Impakt faktor: 1.229, rok: 2003

This article describes the behavior of the contact structures of the Ge/Pd type with addition of a very thin layer of a reactive metal (Ti, Ni, Cr) deposited on the surface of the GaAs plate prior to the metallization. The most suitable structure by the contact resistivity and thermal stability is Ge(40)/Pd(4)/Ti(0.5). This structure showed minimal contact resistivity 2.66 X 10(-6) Omegacm(2). During the reliability test carried out at 400 degreesC, the contact resistivity only doubled after 10 h. The RBS measurement results show little mixing between titanium and GaAs. Chromium and nickel reacted with GaAs substrate very strongly. As presumed, the deposited reactive metals reduce the natural oxides on the GaAs surface, the effect of titanium being the most significant

Je popsáno chování kontaktních struktur typu Ge/Pd s přidanou velmi tenkou vrstvou reaktivního kovu (Ti,Ni,Cr) deponovaného na povrchu Ga As desky před metalizací. Nejvhodnější struktura z hlediska kontaktní rezistivity a tepelné stability je Ge(40)/Pd(4)/Ti(0.5)
Trvalý link: http://hdl.handle.net/11104/0009228