Počet záznamů: 1

DC magnetron sputtering of ZnO thin films

SYSNO ASEP	0487114
Druh ASEP	A - Abstrakt
Zařazení RIV	O - Ostatní
Název	DC magnetron sputtering of ZnO thin films
Tvůrce(i)	Chang, Yu-Ying (FZU-D) Remeš, Zdeněk (FZU-D)_{RID, ORCID}
Celkový počet autorů	2
Zdroj.dok.	Book of Abstracts of the Student Scientific Conference on Instruments and Methods for Biology and Medicine /7./. - Kladno : FBME CTU, 2017 S. 9-9
Poč.str.	1 s.
Forma vydání	Online - E
Akce	Student Scientific Conference on Instruments and Methods for Biology and Medicine /7./
Datum konání	05.05.2017 - 05.05.2017
Místo konání	Praha
Země	CZ - Česká republika
Typ akce	CST
Jazyk dok.	eng - angličtina
Země vyd.	CZ - Česká republika
Klíč. slova	ZnO ; magnetron sputtering ; PDS
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	GC16-10429J GA ČR - Grantová agentura ČR
Institucionální podpora	FZU-D - RVO:68378271
Anotace	Zinc Oxide (ZnO) is a semiconductor with a wide band gap, large exciton binding energy, high electron mobility, high refractive index, high biocompatibility and diversity of nanostructure shapes which makes it suitable for many applications in the optoelectronic devices, optical sensors, and biosensors. Our samples are the nominally undoped ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma and the aluminium doped ZnO thin films deposited by DC magnetron sputtering of ZnO:Al target in the argon. After hydrogen plasma treatment, the increase of the infrared optical absorption, related to free carrier concentration, is detected below the optical absorption edge. The increase of the optical absorption correlates with the increase of the electrical conductivity related to the increase of the free carrier concentration. On the other hand, after oxidation and thermal annealing in air, the optical absorption is significantly reduced in the infrared region and the electrical resistivity increases.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2018

Počet záznamů: 1